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| NTS4173P Power MOSFET -30 V, -1.3 A, Single P-Channel, SC-70 Features * * * * * -30 V BVds, Low RDS(on) in SC-70 Package Low Threshold Voltage Fast Switching Speed This is a Halide-Free Device This is a Pb-Free Device http://onsemi.com V(BR)DSS RDS(on) MAX 150 mW @ -10 V -30 V 200 mW @ -4.5 V 280 mW @ -2.5 V ID MAX -1.2 A -1.0 A -0.9 A Applications * Load Switch * Low Current Inverter and DC-DC Converters * Power Switch for Printers, Communication Equipment MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t5s Power Dissipation (Note 1) Steady State t5s Pulsed Drain Current tp = 10 ms IDM TJ, Tstg IS TL TA = 25C TA = 85C TA = 25C TA = 25C PD 0.35 -5.0 -55 to 150 -1.0 260 A C A C ID Symbol VDSS VGS Value -30 12 -1.2 -0.80 -1.3 0.29 W A Unit V V SC-70/SOT-323 (3 LEADS) S G D 3 1 2 SC-70/SOT-323 CASE 419 STYLE 8 MARKING DIAGRAM/ PIN ASSIGNMENT 3 Drain TGMG G 1 Gate 2 Source Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. TG = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t 5 s (Note 1) Symbol RqJA RqJA Max 425 360 Unit C/W ORDERING INFORMATION Device NTS4173PT1G Package SC-70 (Pb-Free) Shipping 3000/Tape & Reel 1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. * Date code orientation may vary depending upon manufacturing location (c) Semiconductor Components Industries, LLC, 2008 September, 2008 - Rev. 0 1 Publication Order Number: NTS4173P/D NTS4173P MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-to-Source On-Resistance VGS(TH) RDS(on) VGS = VDS, ID = -250 mA VGS = -10 V, ID = -1.2 A VGS = -4.5 V, ID = -1.0 A VGS = -2.5 V, ID = -0.9 A Forward Transconductance gFS Ciss Coss Crss QG(TOT) QG(TH) QGS QGD QG(TOT) QG(TH) QGS QGD td(on) tr td(off) tf td(on) tr td(off) tf VSD tRR ta tb QRR VDS = 20 V, VGS = 0 V, IS = -1.0 A, dISD/dt = 100 A/ms VGS = 0 V, IS = -1.0 A VGS = -10 V, VDS = -15 V, ID = -1.2 A, RG = 3 W VGS = -4.5 V, VDS = -15 V, ID = -1.2 A, RG = 3 W VGS = -10 V, VDS = -15 V, ID = -1.2 A VGS = -4.5 V, VDS = -15 V, ID = -1.2 A VGS = 0 V, f = 1.0 MHz, VDS = -15 V VDS = -5 V, ID = -1.2 A CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge 430 55 40 4.8 0.6 1.1 1.5 10.1 0.6 1.1 1.5 nC nC pF -0.7 -1.15 90 110 165 3.6 -1.5 150 200 280 S V mW V(BR)DSS IDSS IGSS VGS = 0 V, ID = -250 mA VGS = 0 V, VDS = -24 V, TJ = 25C VGS = 0 V, VDS = -24 V, TJ = 85C VDS = 0 V, VGS = "12 V -30 -1.0 -5.0 0.1 V mA mA Symbol Test Condition Min Typ Max Units SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 7.7 5.2 16.2 6.7 5.3 6.7 19.9 7.1 ns ns DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge -0.8 12 10 2.0 7.0 nC -1.0 V ns 2. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2% 4. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 NTS4173P TYPICAL CHARACTERISTICS 5.0 4.5 -ID, DRAIN CURRENT (A) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 -2.0 V -1.8 V 2.5 3.0 -2.2 V -10 V -ID, DRAIN CURRENT (A) -4.5 V -3.0 V -2.6 V TJ = 25C -2.4 V 4.0 3.0 2.0 TJ = 125C 1.0 0 1.0 TJ = 25C TJ = -55C 1.25 1.5 1.75 2.0 2.25 2.5 2.75 3.0 -VGS, GATE-TO-SOURCE VOLTAGE (V) 5.0 VDS -10 V -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.30 0.25 0.20 0.15 0.10 0.05 TJ = 25C ID = -1.2 A 0.30 Figure 2. Transfer Characteristics TJ = 25C 0.25 VGS = -2.2 V 0.20 0.15 0.10 0.05 0.0 VGS = -10 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VGS = -2.5 V VGS = -4.5 V 2 3 4 5 6 7 8 9 10 -VGS, GATE-TO-SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate Voltage 1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 1 0 VGS = -10 V ID = -1.2 A -IDSS, LEAKAGE (nA) 100 1000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage TJ = 150C TJ = 125C 10 TJ = 85C 5 10 15 20 25 30 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTS4173P TYPICAL CHARACTERISTICS -VGS, GATE-TO-SOURCE VOLTAGE (V) 600 500 C, CAPACITANCE (pF) 400 300 200 100 0 Crss 0 5 10 15 20 25 30 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Coss Ciss VGS = 0 V TJ = 25C f = 1 MHz 12 10 8 6 4 2 0 0 2 4 6 VDS VGS QT 16 14 12 10 8 6 Qgs Qgd VDS = -15 V ID = -1.2 A TJ = 25C 8 10 4 2 0 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 100 tf tr 10 td(on) -IS, SOURCE CURRENT (A) VGS = -4.5 V VDD = -15 V ID = -1.2 A t, TIME (ns) td(off) Figure 8. Gate-to-Source Voltage vs. Total Charge 10 1.0 TJ = 150C 125C 25C TJ = -55C 1.0 1.0 10 RG, GATE RESISTANCE (W) 100 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance -VGS(th), GATE-TO-SOURCE VOLTAGE (V) 1.4 1.3 1.2 POWER (W) 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) 150 ID = -250 mA 20 18 16 14 12 10 8 6 4 2 Figure 10. Diode Forward Voltage vs. Current 0 0.0001 0.001 0.01 0.1 1 10 SINGLE PULSE TIME (s) 100 1000 Figure 11. Threshold Voltage Figure 12. Single Pulse Maximum Power Dissipation http://onsemi.com 4 NTS4173P TYPICAL PERFORMANCE CURVES 10 -ID, DRAIN CURRENT (A) 10 ms 1.0 100 ms VGS = -12 V SINGLE PULSE TC = 25C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 ms 10 ms 0.1 0.01 0.1 dc 100 10 1.0 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 13. Maximum Rated Forward Biased Safe Operating Area 1.0 0.5 0.2 0.1 0.1 0.05 0.02 0.01 R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (NORMALIZED) Single Pulse 0.01 0.0001 0.001 0.01 0.1 t, TIME (SECONDS) 1.0 10 100 1000 Figure 14. FET Thermal Response http://onsemi.com 5 NTS4173P PACKAGE DIMENSIONS SC-70 (SOT-323) CASE 419-04 ISSUE M e1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 3 HE 1 2 E b e A 0.05 (0.002) A1 A2 L c DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.079 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 STYLE 8: PIN 1. GATE 2. SOURCE 3. DRAIN SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 NTS4173P/D |
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